power transistors 1 publication date: february 2003 sjd00288aed 2SC5739 silicon npn epitaxial planar type power supply for audio & visual equipments such as tvs and vcrs industrial equipments such as dc-dc converters features ? high-speed switching (t stg : storage time/t f : fall time is short) ? low collector-emitter saturation voltage v ce(sat) ? superior forward current transfer ratio h fe linearity ? to-220d built-in: excellent package with withstand voltage 5 kv guaranteed absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c note) * : non-repetitive peak collector current parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 060v collector-base cutoff current (emitter open) i cbo v cb = 60 v, i e = 0 100 a collector-emitter cutoff current (base open) i ceo v ce = 60 v, i b = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 01ma forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 120 320 ? h fe2 v ce = 4 v, i c = 3 a 40 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 0.5 v transition frequency f t v ce = 10 v, i c = 0.1 a, f = 10 mhz 180 mhz turn-on time t on i c = 1 a, resistance loaded 0.2 0.3 s storage time t stg i b1 = 0.1 a, i b2 = ? 0.1 a 0.55 0.70 s fall time t f v cc = 50 v 0.10 0.15 s internal connection b c e parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 60 v emitter-base voltage (collector open) v ebo 6v collector current i c 3a peak collector current * i cp 6a collector power dissipation p c 20 w t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 1: base 2: collector 3: emitter to-220d-a1 package 1.4 0.2 1.6 0.2 0.8 0.1 0.55 0.15 2.54 0.30 5.08 0.50 123 2.6 0.1 2.9 0.2 4.6 0.2 3.2 0.1 3.0 0.5 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 solder dip note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p h fe1 120 to 250 160 to 320
2SC5739 2 sjd00288aed i c ? v be v ce(sat) ? i c h fe ? i c area of safe operation r th ? t 0 1.2 1.0 0.8 0.2 0.6 0.4 0 7 6 2 5 4 1 3 t a = 100 c ? 25 c 25 c v ce = 4 v base-emitter voltage v be (v) collector current i c (a) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ? 25 c 25 c i c / i b = 8 t a = 100 c collector current i c (a) collector-emitter saturation voltage v ce(sat) (v) 0.01 0.1 1 10 1 10 100 1 000 10 000 t a = 100 c ? 25 c 25 c v ce = 4 v collector current i c (a) forward current transfer ratio h fe 1 10 100 1 000 0.01 0.1 1 10 100 non repetitive pulse t c = 25 c i cp i c t = 10 ms t = 1 ms t = 1 s collector-emitter voltage v ce (v) collector current i c (a) 0.001 100 0.01 1 0.1 10 1 000 0.1 1 10 100 1 000 t a = 25 c (1) (2) (1) without heat sink (2) with 100 100 2 mm al time t (s) thermal resistance r th ( c/w)
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